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radiation hardened logic level power mosfet surface mount (lcc-6) www.irf.com 1

lcc-6 irhluc770z4 60v, dual-n channel technology features: 5v cmos and ttl compatible low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight complimentary p-channel available - irhluc7970z4 2n7617uc product summary part number radiation level r ds(on) i d irhluc770z4 100k rads (si) 0.75 ? 0.89a IRHLUC730Z4 300k rads (si) 0.75 ? 0.89a absolute maximum ratings (per die) parameter units i d @ v gs = 4.5v, t c = 25c continuous drain current 0.89 i d @ v gs = 4.5v, t c = 100c continuous drain current 0.56 i dm pulsed drain current 3.56 p d @ t c = 25c max. power dissipation 1.0 w linear derating factor 0.01 w/c v gs gate-to-source voltage 10 v e as single pulse avalanche energy 20 mj i ar avalanche current 0.89 a e ar repetitive avalanche energy 0.1 mj dv/dt peak diode recovery dv/dt 4.7 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surfacetemp 300 (for 5s) weight 0.2 (typical) g c a pre-irradiation pd-97573 international rectifier?s r7 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ic?s, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available.
irhluc770z4, 2n7617 uc pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics (per n channel die) parameter min typ max units test conditions i s continuous source current (body diode) ? ? 0.89 i sm pulse source current (body diode) ? ? 3.56 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 0.89a, v gs = 0v t rr reverse recovery time ? ? 65 ns t j = 25c, i f = 0.89a, di/dt 100a/ s q rr reverse recovery charge ? ? 67 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier website. thermal resistance (per n channel die) parameter min typ max units test conditions r thja junction-to-ambient ? ? 125

c/w electrical characteristics for n-channel die @tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.07 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.75 ? v gs = 4.5v, i d = 0.56a resistance v gs(th) gate threshold voltage 1.0 ? 2.0 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -4.5 ? mv/c g fs forward transconductance 0.25 ? ? s v ds = 10v, i ds = 0.56a i dss zero gate voltage drain current ? ? 1.0 v ds = 48v ,v gs = 0v ??10 v ds = 48v, v gs = 0v, t j =125c i gss gate-to-source leakage forward ? ? 100 v gs = 10v i gss gate-to-source leakage reverse ? ? -100 v gs = -10v q g total gate charge ? ? 3.6 v gs = 4.5v, i d = 0.89a q gs gate-to-source charge ? ? 1.5 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 1.8 t d (on) turn-on delay time ? ? 8.0 v dd = 30v, i d = 0.89a, t r rise time ? ? 15 v gs = 5.0v, r g = 24 ? t d (off) turn-off delay time ? ? 30 t f fall time ? ? 12 l s + l d total inductance ? 33 ? c iss input capacitance ? 145 ? v gs = 0v, v ds = 25v c oss output capacitance ? 43 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 2.5 ? na nh ns a r g gate resistance ? 8.2 ? ? f = 1.0mhz, open drain measured from the center of drain pad to center of source pad
www.irf.com 3 pre-irradiation irhlu c770z4, 2n7617uc international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

fig a. typical single event effect, safe operating area table 1. electrical characteristics for n-channel device @tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 60 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.0 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 10v i gss gate-to-source leakage reverse ? -100 v gs = -10v i dss zero gate voltage drain current ? 1.0 a v ds = 48v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) ? 0.60 ? v gs = 4.5v, i d = 0.56a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 0.89a resistance (lcc-6) ? 0.75 ? v gs = 4.5v, i d = 0.56a 1. part numbers irhluc770z4, IRHLUC730Z4 table 2. typical single event effect safe operating area let energy range vds (v) (mev/(m g /cm 2 )) (mev) (m) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -2v -4v -5v -6v -7v 38 5% 300 7.5% 38 7.5% 60 60 60 60 60 35 62 5% 355 7.5% 33 7.5% 60 60 60 60 30 - 85 5% 380 7.5% 29 7.5% 60 60 60 40 - - 0 10 20 30 40 50 60 70 -7 -6 -5 -4 -3 -2 -1 0 vgs vds let=38 5% let=62 5% let=85 5%
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0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 10v 7.0v 5.0v 4.0v 3.5v 3.0v 2.75v bottom 2.5v 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5v vgs top 10v 7.0v 5.0v 4.0v 3.5v 3.0v 2.75v bottom 2.5v 22.533.544.55 v gs , gate-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v 6 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 0.89a
www.irf.com 5 pre-irradiation irhlu c770z4, 2n7617uc fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature 0 0.5 1.0 1.5 2.0 2.5 3.0 i d , drain current (a) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c vgs = 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 55 65 75 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 0.89a t j = 25c t j = 150c
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1 10 100 v ds , drain-to-source voltage (v) 0 40 80 120 160 200 240 280 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c fig 11. typical source-to-drain diode forward voltage 00.511.522.533.54 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 0.89a for test circuit see figure 17 25 50 75 100 125 150 t c , case temperature (c) 0 0.2 0.4 0.6 0.8 1.0 i d , d r a i n c u r r e n t ( a )
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1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc !

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p t t dm 1 2 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc 25 50 75 100 125 150 starting t j , junction temperature (c) 0 8 16 24 32 40 48 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.40a 0.56a bottom 0.89a
irhluc770z4, 2n7617 uc pre-irradiation 8 www.irf.com fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 16b. unclamped inductive waveforms t p v (br)dss i as q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - )* fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 18a. switching time test circuit fig 18b. switching time waveforms
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www.irf.com 9 pre-irradiation irhlu c770z4, 2n7617uc total dose irradiation with v gs bias. 10 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 50.4mh, peak i l = 0.89a, v gs = 10v i sd 0.89a, di/dt 200a/ s, v dd 60v, t j 150c pulse width 300 s; duty cycle 2% case outline and dimensions ? lcc-6 footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 10/2010 3. controlling dimension: inch. 2. all dime ns ions are s hown in millimet ers [inches ]. 1. out l ine conf orms t o mil -prf -19500/255l not es : 0.170 0.245 0.080 max. 3 5 4 2 6 1 pin 1 pin 1 0.025 0.090 0.065 0.008 0.100 0.050 0.010 0.010 die 1 & 2 ( n ch ) pin name pin # drain - 1 & 4 gate - 2 & 5 source - 6 & 3

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